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Specific Process Knowledge/Lithography/EBeamLithography/Dose Testing: Difference between revisions

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The most straightforward method is to create one SDF sequence per dose and simply vary the dose with the '''RESIST''' command in the SDF as illustrated below. Each instance must of course be offset with the '''OFFSET''' command such that they are not exposed on top of each other. The pattern information in the referenced JDF can contain a PEC modulation table with this method and hence it is suited for proximity corrected designs.  
The most straightforward method is to create one SDF sequence per dose and simply vary the dose with the '''RESIST''' command in the SDF as illustrated below. Each instance must of course be offset with the '''OFFSET''' command such that they are not exposed on top of each other. The pattern information in the referenced JDF can contain a PEC modulation table with this method and hence it is suited for proximity corrected designs.  


The main benefit of this method is how easy it is to setup and that it supports PEC modulation.
Benefits:
*Easy to set up
*Supports PEC modulation


The drawback is however that the system will perform initial calibration between each sequence, thus for each dose the system will run calibration as defined in the '''PATH''' of the JDF file, this can add several minutes of execution time to each sequence and for a large dose matrix it can cost a lot of additional time.
The drawback is however that the system will perform initial calibration between each sequence, thus for each dose the system will run calibration as defined in the '''PATH''' of the JDF file, this can add several minutes of execution time to each sequence and for a large dose matrix it can cost a lot of additional time.