Specific Process Knowledge/Lithography/EBeamLithography/JEOL Compilation Computer: Difference between revisions

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 ==Limitations of the JEOL Compilation Computer==
-The JCC has three important differences from the JEOL 9500 exposure system:
+The JCC has two important differences from the JEOL 9500 exposure system:
 #It only has a single working condition file (CALPRM) and that is '''2na_ap4'''. Thus it is necesarry to compile with this condition file in all sequences of the SDF file. To get accurate meaningful calculations of shot time and execution time you should however keep the STDCUR at the intended beam current in the JDF file. Remember to change the CALPRM command when transfering the files to the JEOL 9500 system.
-#The base unit for shot pitch is 0.5 nm whereas it is 0.25 nm on the JEOL 9500 system. Thus, if you intend to exposure with 4 nm shot pitch you will use SHOT A, 8 on the JCC while you should use SHOT A, 16 on the JEOL 9500 system
 #The JCC is slower than the JEOL 9500 computer. Hence for large V30 files it is quite slow and one should consider going to the cleanroom and compile on the JEOL 9500 computer instead.