Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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*100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc. | *100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc. | ||
===Results=== | ===Results=== | ||
Temporary conclusions on how the process parameters affect the results in this study | '''Temporary conclusions on how the process parameters affect the results in this study:''' | ||
*Going from full wafer to small piece on Si carrier: | *Going from full wafer to small piece on Si carrier: | ||
**Seemed to give more sidewall passivation | **Seemed to give more sidewall passivation | ||