Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

@@ Line 42: / Line 42: @@
 *100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc.
+===Results===
+Temporary conclusions on how the process parameters affect the results in this study
+*Going from full wafer to small piece on Si carrier:
+**Seemed to give more sidewall passivation
+*Platen power: lowering the platen power gives
+**more sidewall passivation
+**lower etch rate
+**Less trenching
+*Removing the H2 gave:
+**less sidewall passivation
+*Adding O2 gave:
+**less sidewall passivation
+*Process pressure/total gasflow rate
+**Reducing total gasflow rate which reduced the pressur inside the chamber gave:
+***less sidewall passivation
+***Reduced the CD (Critical Dimensions)
+*Coil power: Reducing coil power
+**CD went up
+**more sidewall passivation
+*Increasing process time:
+**less sidewall passivation
+**more sidewall bow
+**CD loss due to larger mask faceting
 <gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px">