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Line 132: |
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| File:C10110_06.jpg | | File:C10110_06.jpg |
| File:C10110_08.jpg |pitch 800 nm <br> Top 461 nm <br> @edge 437 nm <br> bottom 402 nm <br> height 916 nm <br> height from edge 827 nm <br> Cr left 83.5 nm <br> selectivity 55.5 | | File:C10110_08.jpg |pitch 800 nm <br> Top 461 nm <br> @edge 437 nm <br> bottom 402 nm <br> height 916 nm <br> height from edge 827 nm <br> Cr left 83.5 nm <br> selectivity 55.5 |
| File:C10110_10.jpg | | File:C10110_10.jpg |156 nm/min |
| File:C10110_12.jpg | | File:C10110_12.jpg |
| </gallery> | | </gallery> |
Revision as of 11:34, 13 October 2023
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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
Start parameters, variations noted in the gallery headline
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Recipe name: no 10 with lower platen power
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Coil Power [W]
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2500
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Platen Power [W]
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200
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Platen temperature [oC]
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20
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H2 flow [sccm]
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25.6
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C4F8 flow [sccm]
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25.6
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He flow [sccm]
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448.7
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Pressure
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Fully open APC valve (8-9 mTorr)
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Electromagnetic coils (EM) 'outer coil' / 'inner coil'
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'2 A' / '30 A' (PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN)
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- 100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc.
- SiO2 etch with Cr mask on full wafer 6 min etch
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
pitch 800 nm
Top 461 nm
@edge 437 nm
bottom 402 nm
height 916 nm
height from edge 827 nm
Cr left 83.5 nm
selectivity 55.5
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W
pitch 800 nm
Top 444 nm
bottom 374 nm
height 718 nm
Cr left 85 nm
selectivity 48
- SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W