Specific Process Knowledge/Etch/ICP Metal Etcher

Etching of nanostructures in silicon using the ICP Metal Etcher

	Sinano3.0	Sinano3.1	Sinano3.2	Sinano3.3	Sinano3.4	Sinano4.0	Sinano3.5	Sinano3.6
Cl2 (sccm)	0	0	0	0	0	20	15	15
BCl3 (sccm)	5	3	5	5	5	0	5	5
HBr (sccm)	15	17	15	15	15	0	0	0
Coil power (W)	900 (Load)	900 (Forward)	900 (Forward)	900 (Forward)	900 (Forward)	900 (Load)	900 (Load)	900 (Forward)
Platen power (W)	50	50	60	75	90	60	60	60
Pressure (mtorr)	2	2	2	2	2	2	5	10
Process time (s)	150	180	120	180	120	90	120	180
Nominal line width	Etched depths (nm)
30 nm	198	231	147	214	163	227	185	170
60 nm	256	308	181	305	229	253	191	185
90 nm	259	335	195	342	255	251	222	253
120 nm	277	346	203	357	262	257	221	278
150 nm	269	341	205	369	265	262	225	280
Nominal line width	Etch rates in trenches (nm/min)
30 nm	79	77	74	71	82	151	93	57
60 nm	102	103	91	102	115	169	96	62
90 nm	104	112	98	114	128	167	111	84
120 nm	111	115	102	119	131	171	111	93
150 nm	108	114	103	123	133	175	113	93
	Etch rates in zep resist (nm/min)
zep	18	27	35	39	54	45	38	39

• 1 - the first nanoetch

• Sinano3.0

• Sinano3.1

• Sinano3.2

• Sinano3.3

• Sinano3.4

• Sinano3.5

• Sinano3.6

• Sinano4.0