Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
No edit summary |
No edit summary |
||
| Line 145: | Line 145: | ||
</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | ||
File:C10160_02.jpg | File:C10160_02.jpg | ||
File:C10160_06.jpg | File:C10160_06.jpg | ||
| Line 154: | Line 154: | ||
</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px"> | ||
File:C10161_01.jpg | File:C10161_01.jpg | ||
File:C10161_03.jpg | File:C10161_03.jpg | ||