Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
< Specific Process Knowledge | Etch | DRIE-Pegasus | Pegasus-4 | SiO2 Etch
Jump to navigation
Jump to search
No edit summary |
No edit summary |
||
Line 131: | Line 131: | ||
File:C10110_04.jpg | File:C10110_04.jpg | ||
File:C10110_06.jpg | File:C10110_06.jpg | ||
File:C10110_08.jpg |pitch 800 nm <br> Top | File:C10110_08.jpg |pitch 800 nm <br> Top 461 nm <br> @edge 437 nm <br> bottom 402 nm <br> height 916 nm <br> height from edge 827 nm <br> Cr left 83.5 nm <br> selectivity 55.5 | ||
File:C10110_10.jpg | File:C10110_10.jpg | ||
File:C10110_12.jpg | File:C10110_12.jpg | ||
Line 139: | Line 139: | ||
File:C10119_01.jpg | File:C10119_01.jpg | ||
File:C10119_03.jpg | File:C10119_03.jpg | ||
File:C10119_05.jpg | File:C10119_05.jpg |pitch 800 nm <br> Top 444 nm <br> bottom 374 nm <br> height 718 nm <br> Cr left 85 nm <br> selectivity 48 | ||
File:C10119_06.jpg | File:C10119_06.jpg | ||
File:C10119_08.jpg | File:C10119_08.jpg |
Revision as of 15:45, 9 October 2023
Feedback to this page: click here
Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
Start parameters, variations noted in the gallery headline | Recipe name: no 10 with lower platen power |
---|---|
Coil Power [W] | 2500 |
Platen Power [W] | 200 |
Platen temperature [oC] | 20 |
H2 flow [sccm] | 25.6 |
C4F8 flow [sccm] | 25.6 |
He flow [sccm] | 448.7 |
Pressure | Fully open APC valve (8-9 mTorr) |
Electromagnetic coils (EM) 'outer coil' / 'inner coil' | '2 A' / '30 A' |
- 100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc.
- SiO2 etch with Cr mask on full wafer 6 min etch
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W