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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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<gallery>
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
File:C10110_04.jpg
File:C10110_04.jpg
File:C10110_06.jpg
File:C10110_06.jpg
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