Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions
| Line 84: | Line 84: | ||
|180 | |180 | ||
|- | |- | ||
30 nm | |||
! 30 nm | |||
|198 | |||
|231 | |||
|147 | |||
|214 | |||
|163 | |||
|227 | |||
|185 | |||
|170 | |||
|} | |} | ||
Revision as of 11:44, 16 March 2011
This page is under construction
Etching of nanostructures in silicon using the ICP Metal Etcher
30 nm| Sinano3.0 | Sinano3.1 | Sinano3.2 | Sinano3.3 | Sinano3.4 | Sinano4.0 | Sinano3.5 | Sinano3.6 | |
|---|---|---|---|---|---|---|---|---|
| Cl2 (sccm) | 0 | 0 | 0 | 0 | 0 | 20 | 15 | 15 |
| BCl3 (sccm) | 5 | 3 | 5 | 5 | 5 | 0 | 5 | 5 |
| HBr (sccm) | 15 | 17 | 15 | 15 | 15 | 0 | 0 | 0 |
| Coil power (W) | 900 (Load) | 900 (Forward) | 900 (Forward) | 900 (Forward) | 900 (Forward) | 900 (Load) | 900 (Load) | 900 (Forward) |
| Platen power (W) | 50 | 50 | 60 | 75 | 90 | 60 | 60 | 60 |
| Pressure (mtorr) | 2 | 2 | 2 | 2 | 2 | 2 | 5 | 10 |
| Process time (s) | 150 | 180 | 120 | 180 | 120 | 90 | 120 | 180 |
| 30 nm | 198 | 231 | 147 | 214 | 163 | 227 | 185 | 170 |