Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px"> | |||
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Revision as of 11:43, 2 October 2023
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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
Start parameters, variations noted in the gallery headline | Recipe name: no 10 with lower platen power |
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Coil Power [W] | 2500 |
Platen Power [W] | 200 |
Platen temperature [oC] | 20 |
H2 flow [sccm] | 25.6 |
C4F8 flow [sccm] | 25.6 |
He flow [sccm] | 448.7 |
Pressure | Fully open APC valve (8-9 mTorr) |
Electromagnetic coils (EM) 'outer coil' / 'inner coil' | '2 A' / '30 A' |
- 100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc.