Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions

Revision as of 15:44, 26 September 2023 view source Taran (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891 3,527 edits m →Exposure dose for mask aligners ← Older edit		Revision as of 15:45, 26 September 2023 view source Taran (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891 3,527 edits m →Exposure dose for maskless aligners Newer edit →
Line 430:		Line 430:
	The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose and achievable resolution for any given specific project, could be different from the listed values.		The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose and achievable resolution for any given specific project, could be different from the listed values.

	All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH.		All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH (AZ 726 MIF).