Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
No edit summary |
No edit summary |
||
| Line 100: | Line 100: | ||
</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3. | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px"> | ||
File:C10093_03__11.jpg | File:C10093_03__11.jpg | ||
File:C10093_03__09.jpg | File:C10093_03__09.jpg | ||