Specific Process Knowledge/Characterization: Difference between revisions
Line 23: | Line 23: | ||
| width="50" align="center" style="background:#f0f0f0;"|'''IR-camera''' | | width="50" align="center" style="background:#f0f0f0;"|'''IR-camera''' | ||
| width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]''' | | width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]''' | ||
| width="50" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV)|MicroSpectroPhotometer (Craic 20/30 PV)]]''' | |||
|- | |- | ||
|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" |
Revision as of 11:39, 22 September 2023
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Overview of characteristics and where to measure it
Optical Micro- scopes | SEM (incl. EDX) | AFM | Stylus profiler | Optical profiler | Filmtek (reflec- tometer) | Ellip- someter | Thickness stylus | XPS | PL mapper | 4-point probe | Probe station | XRD | Life time scanner | Drop shape analyser | Hardness tester | Particle scanner | IR-camera | III-V ECV-profiler | MicroSpectroPhotometer (Craic 20/30 PV) | |
Breakdown voltage | ||||||||||||||||||||
Carrier density/doping profile | x | |||||||||||||||||||
Charge carrier life time | x | |||||||||||||||||||
Contact angle hydrophobic/hydrophillic | x | |||||||||||||||||||
Crystallinity | x | |||||||||||||||||||
Deposition uniformity | x | x | x | |||||||||||||||||
Dimensions(in plane) | x | x | (x) | (x) | x | |||||||||||||||
Dimensions(height)/Topography | (x) | (x) | x | x | x | |||||||||||||||
Electrical conductivity | x | |||||||||||||||||||
Element analysis | x | x | x 4) | x 4) | ||||||||||||||||
Film stress | x | x 7) | ||||||||||||||||||
Imaging | x | x | x | x | ||||||||||||||||
Material Hardness | x | |||||||||||||||||||
Band gap | x | x | x | |||||||||||||||||
Particles | x | x | x | x | ||||||||||||||||
Phase changes | ||||||||||||||||||||
Reflectivity | x | x | x 6) | |||||||||||||||||
Refractive index | x | x | ||||||||||||||||||
Resistivity | x | |||||||||||||||||||
Step coverage | x 1) | x 1) | ||||||||||||||||||
Surface roughness | x | x | x | x | ||||||||||||||||
Thermal conductivity | ||||||||||||||||||||
Thin film thickness | x 1) | x 1) | x 2) | x 2) | x | x | x | x 5) | x 3) | x | ||||||||||
Voids in wafer bonding | x | x | x | |||||||||||||||||
Wafer thickness | x 1) | x 1) | x | |||||||||||||||||
Work function | x |
- Using the cross section method
- Using the create step method
- With known resistivity
- Composition information for crystalline materials
- Only single layer
- Good for characterization of VCSEL structures and DBR mirrors
- Only for crystalline films
Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Sample preparation for inspection
- Stress measurement
- Hardness measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
- X-ray diffraction
Choose equipment
AFM
Electrical measurements
- 4-Point Probe
- Probe station
- III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)
Element analysis
Optical and stylus profilers
- Optical Profiler (Sensofar)
- Dektak XTA stylus profiler
- P17 stylus profiler from KLA-Tencor
- Dektak 3ST stylus profiler
- Stylus Profiler:Dektak150
Optical microscopes
Optical characterization
SEMs at DTU Nanolab - building 307/314
SEM's in building 346
TEMs at DTU Nanolab - building 307/314
XRD
- XRD Powder, tabletop XRD for Bregg-Brentano measurements of powders
- XRD SmartLab, advanced multipurpose instrument in the cleanroom