Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask

Feedback to this page: click here
Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab

Start parameters, variations noted in the gallery headline	Recipe name: no 10 with lower platen power
Coil Power [W]	2500
Platen Power [W]	200
Platen temperature [oC]	20
H2 flow [sccm]	25.6
C4F8 flow [sccm]	25.6
He flow [sccm]	448.7
Pressure	Fully open APC valve (8-9 mTorr)
Electromagnetic coils (EM) 'outer coil' / 'inner coil'	'2 A' / '30 A'

• 100 nm Cr mask etched in ICP metal with 500nm DUV neg resist and 65 nm barc.

• SiO2 etch with Cr mask on full wafer 6 min etch
• 
• 
• 
• 
• 
• 

• SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch
• 
• 
• 
• 
• 
• 

• SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm
• 
• 
• 
• 
• 
• 

• SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm
• 
• 
• 
• 
• 
•