Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
No edit summary |
No edit summary |
||
| Line 40: | Line 40: | ||
|- | |- | ||
|} | |} | ||
*100 nm Cr mask etched in ICP metal with 500nm DUV neg resist and 65 nm barc. | |||
<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | ||