Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
< Specific Process Knowledge | Etch | DRIE-Pegasus | Pegasus-4 | SiO2 Etch
Jump to navigation
Jump to search
No edit summary |
No edit summary |
||
| Line 40: | Line 40: | ||
|- | |- | ||
|} | |} | ||
<gallery caption=" | <gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | ||
File:C09721_center_10.jpg | File:C09721_center_10.jpg | ||
| Line 50: | Line 50: | ||
</gallery> | </gallery> | ||
<gallery caption=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="6" widths="200px" heights="150px"> | ||
File:C10022_03__06.jpg | File:C10022_03__06.jpg | ||
| Line 60: | Line 60: | ||
</gallery> | </gallery> | ||
<gallery caption=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="6" widths="200px" heights="150px"> | ||
File:C10025_03__11.jpg | File:C10025_03__11.jpg | ||
File:C10025_03__09.jpg | File:C10025_03__09.jpg | ||
| Line 69: | Line 69: | ||
</gallery> | </gallery> | ||
<gallery caption=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="6" widths="200px" heights="150px"> | ||
File:C10026_03__05.jpg | File:C10026_03__05.jpg | ||
File:C10026_03__03.jpg | File:C10026_03__03.jpg | ||
Revision as of 14:02, 21 September 2023
Feedback to this page: click here
Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
| Start parameters, variations noted in the gallery headline | Recipe name: no 10 with lower platen power |
|---|---|
| Coil Power [W] | 2500 |
| Platen Power [W] | 200 |
| Platen temperature [oC] | 20 |
| H2 flow [sccm] | 25.6 |
| C4F8 flow [sccm] | 25.6 |
| He flow [sccm] | 448.7 |
| Pressure | Fully open APC valve (8-9 mTorr) |
| Electromagnetic coils (EM) 'outer coil' / 'inner coil' | '2 A' / '30 A' |
- SiO2 etch with Cr mask on full wafer 6 min etch
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm
