Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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! | !Start parameters, variations noted in the gallery headline | ||
|Recipe name: '''no 10 with lower platen power''' | |Recipe name: '''no 10 with lower platen power''' | ||
Revision as of 12:59, 21 September 2023
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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
| Start parameters, variations noted in the gallery headline | Recipe name: no 10 with lower platen power |
|---|---|
| Coil Power [W] | 2500 |
| Platen Power [W] | 200 |
| Platen temperature [oC] | 20 |
| H2 flow [sccm] | 25.6 |
| C4F8 flow [sccm] | 25.6 |
| He flow [sccm] | 448.7 |
| Pressure | Fully open APC valve (8-9 mTorr) |
| Electromagnetic coils (EM) 'outer coil' / 'inner coil' | '0-10 A' / '0-30 A' |
- EM tests with Cr mask on full wafer 6 min etch
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- EM tests with Cr mask on wafer piece on Si carrier 6 min etch
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- EM tests with Cr mask on full wafer 6 min etch
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- EM tests with Cr mask on full wafer 6 min etch
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