Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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{| border="2" cellspacing="2" cellpadding="3"
!Parameter
|Recipe name: '''no 10 with lower platen power'''
 
|-
|Coil Power [W]
|2500
|-
|Platen Power [W]
|200
|-
|Platen temperature [<sup>o</sup>C]
|20
|-
|H2 flow [sccm]
|25.6
|-
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|25.6
|-
|He flow [sccm]
|448.7
|-
|Pressure
|Fully open APC valve (8-9 mTorr)
|-
|Electromagnetic coils (EM) 'outer coil' / 'inner coil'
|'0-10 A' / '0-30 A'
|-
|}
<gallery caption="EM tests with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px">
<gallery caption="EM tests with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px">


Revision as of 12:58, 21 September 2023

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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab

Parameter Recipe name: no 10 with lower platen power
Coil Power [W] 2500
Platen Power [W] 200
Platen temperature [oC] 20
H2 flow [sccm] 25.6
C4F8 flow [sccm] 25.6
He flow [sccm] 448.7
Pressure Fully open APC valve (8-9 mTorr)
Electromagnetic coils (EM) 'outer coil' / 'inner coil' '0-10 A' / '0-30 A'
  • EM tests with Cr mask on full wafer 6 min etch
  • EM tests with Cr mask on wafer piece on Si carrier 6 min etch
  • EM tests with Cr mask on full wafer 6 min etch
  • EM tests with Cr mask on full wafer 6 min etch
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