Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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{{CC-bghe2}} | {{CC-bghe2}} | ||
{| border="2" cellspacing="2" cellpadding="3" | |||
!Parameter | |||
|Recipe name: '''no 10 with lower platen power''' | |||
|- | |||
|Coil Power [W] | |||
|2500 | |||
|- | |||
|Platen Power [W] | |||
|200 | |||
|- | |||
|Platen temperature [<sup>o</sup>C] | |||
|20 | |||
|- | |||
|H2 flow [sccm] | |||
|25.6 | |||
|- | |||
|C<sub>4</sub>F<sub>8</sub> flow [sccm] | |||
|25.6 | |||
|- | |||
|He flow [sccm] | |||
|448.7 | |||
|- | |||
|Pressure | |||
|Fully open APC valve (8-9 mTorr) | |||
|- | |||
|Electromagnetic coils (EM) 'outer coil' / 'inner coil' | |||
|'0-10 A' / '0-30 A' | |||
|- | |||
|} | |||
<gallery caption="EM tests with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | <gallery caption="EM tests with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | ||
Revision as of 13:58, 21 September 2023
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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
| Parameter | Recipe name: no 10 with lower platen power |
|---|---|
| Coil Power [W] | 2500 |
| Platen Power [W] | 200 |
| Platen temperature [oC] | 20 |
| H2 flow [sccm] | 25.6 |
| C4F8 flow [sccm] | 25.6 |
| He flow [sccm] | 448.7 |
| Pressure | Fully open APC valve (8-9 mTorr) |
| Electromagnetic coils (EM) 'outer coil' / 'inner coil' | '0-10 A' / '0-30 A' |
- EM tests with Cr mask on full wafer 6 min etch
- EM tests with Cr mask on wafer piece on Si carrier 6 min etch
- EM tests with Cr mask on full wafer 6 min etch
- EM tests with Cr mask on full wafer 6 min etch
