Jump to content

Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions

Bghe (talk | contribs)
Bghe (talk | contribs)
Line 37: Line 37:


Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip that was placed in the center of a 6" wafer. The Etch profile is more angles.  
Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip that was placed in the center of a 6" wafer. The Etch profile is more angles.  
*I few more test with resist mask and electromagnets can be found here: [[/EM with resist mask]]
*I few more test with resist mask and electromagnets can be found here: [[/EM with resist mask|EM with resist mask]]
<br clear="all"/>
<br clear="all"/>