Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
Appearance
| Line 33: | Line 33: | ||
</gallery> | </gallery> | ||
Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip that was placed in the center of a 6" wafer. The Etch profile is more angles. | |||
<br clear="all"/> | <br clear="all"/> | ||