Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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[[File:SiO2 etch uniformity DOE3_10.JPG|400px|thumb|left|Etched for 3min56s, average etch rate: 250 nm/min +- 2.9% ]] | [[File:SiO2 etch uniformity DOE3_10.JPG|400px|thumb|left|Etched for 3min56s, average etch rate: 250 nm/min +- 2.9% ]] | ||
[[File:Contour Plot Y31 EM_02_30 white to blue.jpg|400px|thumb|left|Etched with EM:02/30 for 2min, average etch rate: 275 nm/min +- 4.5%. The electro magnets changed the uniformity pattern and made it a bit worse ]] | [[File:Contour Plot Y31 EM_02_30 white to blue.jpg|400px|thumb|left|Etched with EM:02/30 for 2min, average etch rate: 275 nm/min +- 4.5%. The electro magnets changed the uniformity pattern and made it a bit worse ]] | ||
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<gallery> | <gallery caption="Recipe name: SiO2_res_10, Recipe no. 10+EM coils: C06445_02 coil_2500W, platen:300W, EM:02/30A, He/C4F8= 17.5, C4F8/H2=1, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:25.6sccm, 3:56 min " perrow="5"> | ||
File:C09936_01.jpg | File:C09936_01.jpg | ||
File:C09936_02.jpg | File:C09936_02.jpg | ||