Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions

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Revision as of 10:38, 8 September 2023 view source Thope (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231 2,179 edits →JEOL 9500 and Raith eLine Plus specifications ← Older edit		Revision as of 10:40, 8 September 2023 view source Thope (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231 2,179 edits →Introduction to E-beam lithography at DTU Nanolab Newer edit →
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	Compared to UV lithography EBL is somewhat more complicated and in general a significantly longer process. Writing time (per area) is much higher and thus EBL is only adviseable for structures with Critical Dimensions (CD) below 1 µm. For CD equal to or higher than 1 µm please consider our '''[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_02 \| Maskless Aligner tools.]]'''		Compared to UV lithography EBL is somewhat more complicated and in general a significantly longer process. Writing time (per area) is much higher and thus EBL is only adviseable for structures with Critical Dimensions (CD) below 1 µm. For CD equal to or higher than 1 µm please consider our '''[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_02 \| Maskless Aligner tools.]]'''


	For more information and specific workflows on either tool, please refer to their respective pages; [[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ\|JEOL JBX-9500FSZ]] or [[Specific_Process_Knowledge/Lithography/EBeamLithography/eLINE\|Raith eLINE Plus]].