Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions

Revision as of 11:06, 4 September 2023 view source Bghe (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,321 edits →Etch rate uniformity ← Older edit		Revision as of 11:06, 4 September 2023 view source Bghe (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,321 edits →Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching Newer edit →
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	[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg\|400px\|thumb\|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]		[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg\|400px\|left\|thumb\|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]