Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions
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[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg|400px|thumb|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]] | |||