Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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File:Contour Plot Y26 EM_0_30.JPG|Etch time: 2 min, Average etch rate: 203.8 nm/min, range:+-6.1% | File:Contour Plot Y26 EM_0_30.JPG|Etch time: 2 min, Average etch rate: 203.8 nm/min, range:+-6.1% | ||
File:Contour Plot Y29 EM_2_30.JPG|Etch time: 2 min, Average etch rate: 186.2 nm/min, range:+-3.2% | File:Contour Plot Y29 EM_2_30.JPG|Etch time: 2 min, Average etch rate: 186.2 nm/min, range:+-3.2% | ||
File:Contour Plot patterned wafer EM_2_30.JPG| Etch time: 6 min on patterned wafer with different measurement points, <100 nm Cr mask is still on, Average etch rate: 207-223 nm/min depending on how much Cr mask is left, range:+-2.3% | File:Contour Plot patterned wafer EM_2_30.JPG| Etch time: 6 min on patterned wafer with different measurement points, <100 nm Cr mask is still on, EM_2/30, Average etch rate: 207-223 nm/min depending on how much Cr mask is left, range:+-2.3% | ||
</gallery> | </gallery> | ||