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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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|-
|Etch of SRN
|Average etch of SRN on 6" wafer
|'''~43nm/min [measured 39-50 nm/min over a 6" wafer]
|166 nm/min [+- 17% over a 6" wafer]'''
|'''23-25 nm/min [4" on carrier]]
|142 nm/min [+- 9% over a 6" wafer]'''


|-
|-
|Etch rate of Si3N4
|Etch rate of Si3N4
|'''~49 nm/min [4" on carrier]
|?
|'''24-26 nm/min [4" on carrier]
|?


|-
|-
|Etch rate of SiO2
|Etch rate of SiO2
|'''~42nm/min [41-43 nm/min over a 6" wafer]
|250 nm/min [+- 3% over a 6" wafer]
|'''13.7-14.7 nm/min [4" on carrier]
|306 nm/min [on small piece]


|-
|-
|Etch rate in Si
|Etch rate in Si
|'''ñm/min
|?ñm/min
|'''11-13 nm/min (10% load, 4" wafer on 6" carrier)
|? nm/min
|-
|-
|Etch rate of Mir resist
|Etch rate of Mir resist
|'''~nm/min  
|'''?nm/min  
|'''~17 nm/min
|'''? nm/min


|-
|Tested etch time without burning the resist
|3 min (6 min => resist burned)
|30 min
|-
|Profile [<sup>o</sup>]
|
|
|-
|-
|}
|}
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