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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride Etch: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
Line 12: Line 12:
{| border="2" cellspacing="2" cellpadding="3"  
{| border="2" cellspacing="2" cellpadding="3"  
!Parameter
!Parameter
|Recipe name: '''Slow Etch'''
|Recipe name: '''SiO2_res_10'''
|Recipe name: '''Slow Etch2'''
|Recipe name: '''DOE2/Post_II_21'''
    
    
|-
|-
|Coil Power [W]
|Coil Power [W]
|350
|2500
|200
|200


|-
|-
|Platen Power [W]
|Platen Power [W]
|25
|300
|50
|50


Line 32: Line 32:
|-
|-
|H2 flow [sccm]
|H2 flow [sccm]
|25.6
|15
|15
|15
|-
|He flow [sccm]
|448.7
|0


|-
|-
|CF<sub>4</sub> flow [sccm]
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|30
|25.6
|30
|30


|-
|-
|Pressure [mTorr]
|Pressure [mTorr]
|3
|8.8
|10
|10


Line 50: Line 54:
{| border="2" cellspacing="2" cellpadding="3"
{| border="2" cellspacing="2" cellpadding="3"
!Typical results
!Typical results
!'''Slow Etch'''
!'''SiO2_res_10'''
!'''Slow Etch2'''
!'''DOE2/Post_II_21'''


|-
|-
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