Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4: Difference between revisions
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==Pegasus 4 - 150mm silicon oxide and silicon nitride etching== | ==Pegasus 4 - 150mm silicon oxide and silicon nitride etching== | ||
[[Image:Peg3and4 front 2.JPG |frame|right|x300px|The DRIE-Pegasus3 and DRIE-Pegasus4 operator station and cassette loading stations, {{photo1}}]] | |||
DRIE-Pegasus 4 is dedicated Silicon oxide and Silicon nitride etching. It is originally designed for silicon etching but gas mass flow controllers has been changed to optimize silicon oxide and silicon nitride etching. The system is setup for 6" wafers. Sampler samples has to be bonded to a 6" carrier to be etched in the system. | DRIE-Pegasus 4 is dedicated Silicon oxide and Silicon nitride etching. It is originally designed for silicon etching but gas mass flow controllers has been changed to optimize silicon oxide and silicon nitride etching. The system is setup for 6" wafers. Sampler samples has to be bonded to a 6" carrier to be etched in the system. | ||
'''The user manual and contact information can be found in LabManager:''' | '''The user manual and contact information can be found in LabManager:''' | ||