Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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===Uniformity results with SiO2_res_10=== | ===Uniformity results with SiO2_res_10=== | ||
[[File:SiO2 etch uniformity DOE3_10.JPG|400px|thumb|left|Etched for 3min56s, average etch rate: 250 nm/min +- 2.9% ]] | [[File:SiO2 etch uniformity DOE3_10.JPG|400px|thumb|left|Etched for 3min56s, average etch rate: 250 nm/min +- 2.9% ]] | ||
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==SiO2 Etch using aSi as masking material== | ==SiO2 Etch using aSi as masking material== | ||