Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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*Anisotropic etch: almost vertical sidewalls | *Anisotropic etch: almost vertical sidewalls | ||
*We prefer that SiO2 etch | *We prefer that SiO2 etch takes place in the AOE or Pegasus 4. | ||
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*Primarily for pure physical etch by sputtering with Ar-ions | *Primarily for pure physical etch by sputtering with Ar-ions | ||
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==Dry etch with Hard mask== | ==Dry etch with Hard mask== | ||