Specific Process Knowledge/Thin film deposition/ALD2 (PEALD): Difference between revisions

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 *Al<sub>2</sub>O<sub>3</sub> - Thermal Al<sub>2</sub>O<sub>3</sub> (mainly backup for ALD1) and Al<sub>2</sub>O<sub>3</sub> using plasma
 *TiO<sub>2</sub> (amorphous or anatase) - Thermal TiO<sub>2</sub> (mainly backup for ALD1) and TiO<sub>2</sub> using plasma
-*SiO<sub>2</sub> - SiO<sub>2</sub> using plasma (<i>March 2020: SiO<sub>2</sub> depositions gives very bad results</i>)
 *HfO<sub>2</sub> - Thermal HfO<sub>2</sub> (mainly backup for ALD1)
 *AlN - AlN using plasma
 *TiN - Thermal TiN and TiN using plamsa
-Is is not possible to deposit oxides and nitrides at the same time
+*ZnO
+*AZO
+All precursors might not be available at the same time.
+Is is not possible to deposit oxides and nitrides at the same time.
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 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
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 *Oxides: Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, ZnO, AZO: 0-100 nm
 *Nitrides: SiO<sub>2</sub>, AlN, TiN: 0-100 nm
-<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, and because the deposition is very slow, the allowed deposition thickness is limited to 100 nm. It is not allowed to make more depositions in the same sample(s) to get a thicker layer. If you want to deposit a thicker layer than 100 nm, you need an approval from one of the responsible persons. It might also be possible to use other machines in the cleanroom for the deposition of the same materials</sub>
+<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i>
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 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter