Specific Process Knowledge/Thin film deposition/ALD2 (PEALD): Difference between revisions
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[[image:ALD2.jpg|450x450px|right|thumb|ALD 2 (PEALD). Positioned in cleanroom F-2.]] | [[image:ALD2.jpg|450x450px|right|thumb|ALD 2 (PEALD). Positioned in cleanroom F-2.]] | ||
The ALD 2 (PEALD) is used to deposit very thin and uniform layers of different materials, by use of thermal ALD (Atomic Layer Deposition) or PEALD (Plasma Enhanced ALD). | The ALD 2 (PEALD) is used to deposit very thin and uniform layers of different materials, by use of thermal ALD (Atomic Layer Deposition) or PEALD (Plasma Enhanced ALD). Layers can be up to 100 nm thick, see the table below. | ||
The ALD deposition takes place in an ALD reactor chamber. In order to ensure that the temperature inside this reactor is the same everywhere, it has a dual chamber structure. The inner chamber is the reactor chamber, and the outer chamber is isolating the reactor chamber from room air. Both the inner and the outer chamber are under vacuum. The space between the two chambers is called an intermediate space (IMS), and the IMS is constantly purged with nitrogen. | The ALD deposition takes place in an ALD reactor chamber. In order to ensure that the temperature inside this reactor is the same everywhere, it has a dual chamber structure. The inner chamber is the reactor chamber, and the outer chamber is isolating the reactor chamber from room air. Both the inner and the outer chamber are under vacuum. The space between the two chambers is called an intermediate space (IMS), and the IMS is constantly purged with nitrogen. | ||
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[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=365 ALD 2 (PEALD) info page in LabManager] | [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=365 ALD 2 (PEALD) info page in LabManager] | ||
== Process information == | == Process information == | ||