Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions

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 *TiO<sub>2</sub>: 0 - 100 nm
 *HfO<sub>2</sub>: 0 - 100 nm
-<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, and because the deposition is very slow, the allowed deposition thickness is limited to 100 nm. It is not allowed to make more depositions in the same sample(s) to get a thicker layer. If you want to deposit a thicker layer than 100 nm, you need an approval from one of the responsible persons. It might also be possible to use other machines in the cleanroom for the deposition of the same materials</i>
+<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm. Deposition of thicker layers is not allowed, because they will occupy the machine for long time and thus make it available for less users. Long depositions issues and with flakes and particles, which means that chamber and the pump line will have to cleaned or changed quite often. Furthermore, the delivery time on precursor is usually quite long. So we you make a sample design, you should avoid to steps, where you need to deposit thicker layer than 100 nm with ALD, or you can consider, if the same materials can be deposited using other machines in the cleanroom.</i>
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 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range