Specific Process Knowledge/Characterization/SEM Gemini 1: Difference between revisions
Appearance
| Line 121: | Line 121: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Fixed at High vacuum (2 × 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar) | *Fixed at High vacuum (2 × 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar) | ||
*Variable at Low vacuum ( | *Variable at Low vacuum: | ||
**Standard VP (variable pressure): 5-60 Pa | |||
**Nano VP, 350 um beamsleeve aperture: 5-150 Pa | |||
**Nano VP, 800 um beamsleeve aperture: 5-40 Pa | |||
|- | |- | ||
|style="background:LightGrey; color:black"|Options | |style="background:LightGrey; color:black"|Options | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *Antivibration platform | ||
*Electron magnetic noise cancellations system | |||
*Plasma cleaner | |||
*Sample bias option | |||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Up to 6" wafer with full view | *Up to 6" wafer with full view (requires rotation) | ||
|- | |- | ||
| style="background:LightGrey; color:black"|Allowed materials | | style="background:LightGrey; color:black"|Allowed materials | ||