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Specific Process Knowledge/Characterization/SEM Gemini 1: Difference between revisions

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*Fixed at High vacuum (2 &times; 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
*Fixed at High vacuum (2 &times; 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
*Variable at Low vacuum (0.1 mbar - 2 mbar)
*Variable at Low vacuum:
**Standard VP (variable pressure): 5-60 Pa
**Nano VP, 350 um beamsleeve aperture: 5-150 Pa
**Nano VP, 800 um beamsleeve aperture: 5-40 Pa
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|style="background:LightGrey; color:black"|Options
|style="background:LightGrey; color:black"|Options
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*High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
*Antivibration platform
*Electron magnetic noise cancellations system
*Plasma cleaner
*Sample bias option
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
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*Up to 6" wafer with full view
*Up to 6" wafer with full view (requires rotation)
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| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials