Specific Process Knowledge/Thin film deposition/ALD2 (PEALD): Difference between revisions
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|style="background:LightGrey; color:black"|Thickness | |style="background:LightGrey; color:black"|Thickness | ||
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*Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>: | Oxides: *Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, ZnO, AZO: 0-100 nm | ||
*SiO<sub>2</sub>, AlN, TiN: | Nitrides: *SiO<sub>2</sub>, AlN, TiN: 0-100 nm | ||
<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, and because the deposition is very slow, the allowed deposition thickness is limited to 100 nm. It is not allowed to make more depositions in the same sample(s) to get a thicker layer. If you want to deposit a thicker layer than 100 nm, you need an approval from one of the responsible persons. It might also be possible to use other machines in the cleanroom for the deposition of the same materials</sub> | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter | ||