Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions
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The annealing is done in a process chamber on the machine, in which the samples are heated very rapidly by use of infra red lamps placed in the top of the chamber, directly above the sample(s). The chamber walls are cooled and remains cold during the annealing. | The annealing is done in a process chamber on the machine, in which the samples are heated very rapidly by use of infra red lamps placed in the top of the chamber, directly above the sample(s). The chamber walls are cooled and remains cold during the annealing. | ||
Samples can be wafers (2", 4", 6" and 8") or smaller samples made of different materials. In the process chamber, | Samples can be wafers (2", 4", 6" and 8") or smaller samples made of different materials. In the process chamber, Si-based samples are normally placed on a 6" graphite susceptor and III-V and metals samples on a Si carrier wafer. Wafers can also be placed directly in the chamber. | ||
The maximum annealing temperature is 1200 C. For temperatures above 700 C the annealing time is limited as can be seen in the table below. | The maximum annealing temperature is 1200 C. For temperatures above 700 C the annealing time is limited as can be seen in the table below. | ||