Specific Process Knowledge/Etch/DRIE-Pegasus/FAQ/Nanoetch: Difference between revisions
New page: ; Question : One of our 'popular' etches on the old ASE, a switched etch of nanostructures , is proving very difficult to transfer to the Pegasus. The structures are typically e-beam defin... |
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: One of our 'popular' etches on the old ASE, a switched etch of nanostructures , is proving very difficult to transfer to the Pegasus. The structures are typically e-beam defined channels or holes a few hundred nanometers wide and masked with 50-100 nm ZEP resist. The etch load is usually very low, less than a few | : One of our 'popular' etches on the old ASE, a switched etch of nanostructures , is proving very difficult to transfer to the Pegasus. The structures are typically e-beam defined channels or holes a few hundred nanometers wide and masked with 50-100 nm ZEP resist. The etch load is usually very low, less than a few percent. We would like to go as much as 1 µm down. (I have been on paternity leave during the summer and I am sitting at home with my son right now so I don't have/know the complete story but I will get it for you if needed.) Do you have a suggestion to a starting point for such an etch? | ||
percent. We would like to go as much as 1 µm down. (I have been on paternity leave during the summer and I am sitting at home with my son right now so I don't have/know the complete story but I will get it for you if needed.) Do you have a suggestion to a starting point for such an etch? | |||
; Answer | ; Answer | ||
Revision as of 14:04, 25 February 2011
- Question
- One of our 'popular' etches on the old ASE, a switched etch of nanostructures , is proving very difficult to transfer to the Pegasus. The structures are typically e-beam defined channels or holes a few hundred nanometers wide and masked with 50-100 nm ZEP resist. The etch load is usually very low, less than a few percent. We would like to go as much as 1 µm down. (I have been on paternity leave during the summer and I am sitting at home with my son right now so I don't have/know the complete story but I will get it for you if needed.) Do you have a suggestion to a starting point for such an etch?
- Answer
- Congratulations of your new addition! I can suggest a starting point for this but it would probably be best to wait until you can send me the additional details.
- Question
- I have attached some images/summary of the nanoetches produced on the ASE and that we haven't been able to transfer to the Pegasus. What we are interested in is making small holes/trenches down to 30 nm diameter/width using ZEP520A E-beam resist as masking, hopefully as deep as 500 nm and (because of the small openings) with excellent selectivity. There is, in fact, a lot of need for this recipe so I really hope that you can help me with a starting point.
- Question
- Nano-scale etching on the Pegasus is relatively rare, however I would imagine that it should be possible to get similar results to those achieved in ICP. The process below was used to etch trenches of ~125nm to a depth of ~150nm with very low CD loss and smooth sidewall. The process was used to only etch a small amount to define the opening of the structure; following this a standard Bosch process was used to etch to several microns depth so we did not look at selectivity of this first opening step.
- 38SF6, 52C4F8, 4mT, 800W Coil, 50W platen, Platen @10°C, 38s to achieve 150nm depth.
- The process was run in long funnel configuration; if you are using short funnel, I would expect that a reduction of platen power would be needed but ultimately selectivity with long funnel is likely to be better.
- I will send the details on the positive profile etching shortly.