Specific Process Knowledge/Thermal Process/Oxidation/Dry oxidation C1 furnace: Difference between revisions
Appearance
No edit summary |
No edit summary |
||
| Line 1: | Line 1: | ||
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i> | |||
<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]] | <span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]] | ||
The C1 furnace can be used for dry oxidation of 4" and 6" wafers. | The C1 furnace can be used for dry oxidation of 4" and 6" wafers. | ||