Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions
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|0.5Å/s to 10Å/s | |0.5Å/s to 10Å/s | ||
|~0.3Å/s | |~0.3Å/s | ||
| | |at least in the range 1 Å/s to 4 Å/s | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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! Comment | ! Comment | ||
| Tantalum deposition heats the chamber* | | Tantalum deposition heats the chamber* | ||
| | | 2-inch Ta target | ||
| 3-inch Ta target | | 3-inch Ta target | ||
|} | |} | ||
'''*''' ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].'' | '''*''' ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].'' | ||