Specific Process Knowledge/Thin film deposition/Deposition of NiV: Difference between revisions
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|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]]) | |Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]]) | ||
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | |||
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | |Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! General description | ! General description | ||
| Sputter deposition of NiV | |||
| Sputter deposition of NiV | | Sputter deposition of NiV | ||
| Sputter deposition of NiV | | Sputter deposition of NiV | ||
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|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
| none | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
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|About 10Å to 5000Å | |About 10Å to 5000Å | ||
|About 10Å to 5000Å | |About 10Å to 5000Å | ||
|About 10Å to 5000Å | |||
|- | |- | ||
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|Depending on process parameters(normally less than 1 A/sec). | |Depending on process parameters(normally less than 1 A/sec). | ||
|Depending on process parameters(normally less than 1 A/sec). | |Depending on process parameters(normally less than 1 A/sec). | ||
|Depending on process parameters(normally less than 1 A/sec). | |||
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*1x4" wafer or | *1x4" wafer or | ||
*1x6" wafer | *1x6" wafer | ||
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*Up to 10x4" or 6" wafers | |||
*Many smaller pieces | |||
| | | | ||
*24x2" wafers or | *24x2" wafers or | ||
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* Quartz wafers | * Quartz wafers | ||
* Pyrex wafers(No substrate heating) | * Pyrex wafers(No substrate heating) | ||
| | |||
* Almost any that do not outgas. | |||
| | | | ||
* Silicon wafers | * Silicon wafers | ||
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* Metals | * Metals | ||
* Carbon | * Carbon | ||
| | |||
* Almost any that do not outgas. | |||
| | | | ||
* Silicon | * Silicon | ||
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* Metals | * Metals | ||
* Carbon | * Carbon | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Target size | ! Target size | ||
| 2 inch sputter target | | 2 inch sputter target | ||
| 3 inch sputter target | |||
(or in special cases 4 inch) | |||
| 6 inch sputter target | | 6 inch sputter target | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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*Sputter target with NiV composition: Ni/V 93/7% | *Sputter target with NiV composition: Ni/V 93/7% | ||
*Substrate rotation | |||
*Substrate RF Bias (optional) | |||
| | |||
*Sputter target with NiV composition: Ni/V 93/7% | |||
*Substrate rotation | *Substrate rotation | ||
*Substrate RF Bias (optional) | *Substrate RF Bias (optional) | ||
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*No substrate rotation | *No substrate rotation | ||
*No substrate RF Bias | *No substrate RF Bias | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||