Specific Process Knowledge/Thin film deposition/Deposition of Niobium: Difference between revisions

From LabAdviser
Eves (talk | contribs)
No edit summary
Reet (talk | contribs)
No edit summary
Line 1: Line 1:


'''Feedback to this page''': '''[mailto:LabAdviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Niobium click here]'''
'''Feedback to this page''': '''[mailto:LabAdviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Niobium click here]'''


<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
Line 85: Line 85:
|}
|}


'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''
'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''


'''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''
'''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''

Revision as of 09:15, 9 June 2023

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal

Deposition of Nb

Niobium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the deposition equipment.

E-beam evaporation (Temescal) Sputter deposition (Lesker)
General description E-beam deposition of Nb

(line-of-sight deposition)

Sputter deposition of Nb

(not line-of-sight deposition)

Pre-clean Ar ion bombardment RF Ar clean
Layer thickness 10Å to 200 nm* 10Å to 600 nm**
Deposition rate 0.5Å/s to 5Å/s ~1Å/s
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller pieces
  • smaller pieces
  • Up to 1x6" wafers
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Comment Substrates get heated during the deposition.

For 100 nm Nb at 2 Å/s, the substrate reached about 105 °C.

* To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)

** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)