Specific Process Knowledge/Thin film deposition/Deposition of AZO: Difference between revisions
No edit summary |
No edit summary |
||
Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_AZO click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_AZO click here]''' | ||
''All content by DTU Nanolab staff''. | ''All content by DTU Nanolab staff''. | ||
Revision as of 13:42, 2 June 2023
Feedback to this page: click here
All content by DTU Nanolab staff.
AZO can be deposited by sputtering or atomic layer deposition (ALD). In sputter-deposition of AZO, we use an AZO target that may be RF-sputtered or reactively DC-sputtered. You can also co-deposit Al and ZnO. Note that in multipurpose sputter systems such as ours it may be difficult to obtain low enough contamination for high-quality AZO. Talk to Nanolab staff or your colleagues if you would like to locate a sputter system that can be dedicated to AZO-deposition.
In the chart below you can compare the different deposition equipment available here at Nanolab:
Sputter deposition Sputter-system Metal-Oxide(PC1) | Sputter deposition (Sputter-System(Lesker)) | Atomic layer deposition (ALD Picosun R200) | |
---|---|---|---|
General description |
|
|
|
Pre-clean | RF Ar clean | RF Ar clean | |
Layer thickness | few nm to ? hundreds of nm* | 10Å to 5000Å* | 0 to 1000 Å |
Deposition rate | Depending on process parameters. | Depending on process parameters, e.g., 0.3 Å/s reactive DC-sputtering (see process log for details) | Depending on temperature |
Batch size |
|
|
|
Allowed materials |
|
|
|
Comment |
|
|
* For thicknesses above 200 nm permission is required. Write to thinfilm@nanolab.dtu.dk.