Specific Process Knowledge/Characterization/XRD/Process Info: Difference between revisions
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==XRD for III-V materials== | ==XRD for III-V materials== | ||
''(written by DTU Nanolab internal and DTU Fotonik staff)'' | ''(written by DTU Nanolab internal and DTU Fotonik staff)'' | ||
X-ray diffraction is a non-destructive technique which among many other things is able to measure the lattice mismatch of epitaxially grown layers. The applicable measurements are know as rocking-curves and reciprocal space maps and are described further below. Using these it is possible to find out the relative content of e.g. In in Ga<sub>x</sub>In<sub>1-x</sub>As grown on InP. Ga<sub>0.47</sub>In<sub>0.53</sub>As is lattice-matched to InP. Compounds containing three different materials are also called ternaries. | X-ray diffraction is a non-destructive technique which among many other things is able to measure the lattice mismatch of epitaxially grown layers. The applicable measurements are know as rocking-curves and reciprocal space maps and are described further below. Using these it is possible to find out the relative content of e.g. In in Ga<sub>x</sub>In<sub>1-x</sub>As grown on InP. Ga<sub>0.47</sub>In<sub>0.53</sub>As is lattice-matched to InP. Compounds containing three different materials are also called ternaries. | ||
For more complex compounds containing 4 elements, known as quaternaries, e.g. Ga<sub>x</sub>In<sub>1-x</sub>As<sub>y</sub>P<sub>1-y</sub>, it is possible to obtain both x and y by combining x-ray diffraction measurements and PL-measurements (see [[Specific Process Knowledge/Characterization/PL mapper|PL Mapper]]). | For more complex compounds containing 4 elements, known as quaternaries, e.g. Ga<sub>x</sub>In<sub>1-x</sub>As<sub>y</sub>P<sub>1-y</sub>, it is possible to obtain both x and y by combining x-ray diffraction measurements and PL-measurements (see [[Specific Process Knowledge/Characterization/PL mapper|PL Mapper]]). | ||