Specific Process Knowledge/Characterization/XRD/Process Info: Difference between revisions
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= Process information = | = Process information = | ||
The following measurements types are just some of the options you have on the [http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Characterization/XRD/XRD_SmartLab Rigaku SmartLab] | The following measurements types are just some of the options you have on the [http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Characterization/XRD/XRD_SmartLab Rigaku SmartLab] | ||
==HR XRD for III-V materials== | |||
X-ray diffraction is a non-destructive technique which among many other things is able to measure the lattice mismatch of epitaxially grown layers. The applicable measurements are know as rocking-curves and reciprocal space maps. Using these it is possible to find out the relative content of e.g. In in Ga<sub>x</sub>In<sub>1-x</sub>As grown on InP. Ga<sub>0.47</sub>In<sub>0.53</sub>As is lattice-matched to InP. Compounds containing three different materials are also called ternaries. | |||
For more complex compounds containing 4 elements, known as quaternaries, e.g. Ga<sub>x</sub>In<sub>1-x</sub>As<sub>y</sub>P<sub>1-y</sub>, it is possible to obtain both x and y by combining x-ray diffraction measurements and PL-measurements (see [[Specific Process Knowledge/Characterization/PL mapper|PL Mapper]]). | |||
== Slit selection (BB vs. PB)== | == Slit selection (BB vs. PB)== | ||
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image:eves_PB_slit_selection_20230206.png|<b>C 1s</b> signal. | image:eves_PB_slit_selection_20230206.png|<b>C 1s</b> signal. | ||
</gallery> | </gallery> | ||
= Bragg-Brentano= | = Bragg-Brentano= | ||
<gallery caption="XPS recordings. 10 nm SiC deposited on Si wafer" widths="700px" heights="480px" perrow="1"> | <gallery caption="XPS recordings. 10 nm SiC deposited on Si wafer" widths="700px" heights="480px" perrow="1"> | ||