Specific Process Knowledge/Etch/DRIE-Pegasus/TrenchCharacterisation: Difference between revisions

@@ Line 9: / Line 9: @@
 = Characterization of DRIE silicon trenches =
-Dry etched silicon trenches come in many sizes and shapes. In most cases the best way of characterizing them is to cleave the wafer perpendicular to the trench and inspect the profile in an SEM or optical microscope. In the SEM the challenge is to get the best information possible about the profile in as little time as possible. The information acquired must be simple and useful. Below is an example.
+Dry etched silicon trenches come in many sizes and shapes. In most cases the best way of characterizing them is to cleave the wafer perpendicularly to the trench and inspect the profile in an SEM or optical microscope. The SEM provides by far the best information as there are no challenges with limited depth of focus or image resolution. The work of adding measurements to SEM images, collecting the data and making sure that it is complete is, however, tedious. Often the time available on the SEM is limited. Below is an example with suggestions of possible measurements.
 [[File:etched profiles (3).PNG|1000px]]