Specific Process Knowledge/Thermal Process: Difference between revisions
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'''Other furnaces:''' | '''Other furnaces:''' | ||
*[[/Furnace: Multipurpose annealing |Furnace: Multipurpose annealing ]] - ''For annealing, oxidation and resist pyrolysis'' | *[[/Furnace: Multipurpose annealing |Furnace: Multipurpose annealing ]] - ''For annealing, oxidation and resist pyrolysis'' | ||
*[[/RTP Jipelec 2|RTP Jipelec 2]] - ''For rapid thermal annealing of III-V materials and Si based materials'' | *[[/RTP Jipelec 2|RTP Jipelec 2]] - ''For rapid thermal annealing of III-V materials and Si based materials'' | ||
*[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing and smoothing of Si based materials'' | *[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing and smoothing of Si based materials'' | ||
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== Decommissioned equipment == | == Decommissioned equipment == | ||
*[[/Jipelec RTP|RTP Jipelec]] - ''For rapid thermal annealing of III-V materials and Si based materials'' | |||
*[[/Furnace APOX|APOX furnace]] - ''For growing of very thick oxide layers'' | *[[/Furnace APOX|APOX furnace]] - ''For growing of very thick oxide layers'' | ||
*[[/D4 III-V Oven|III-V Oven (D4)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | *[[/D4 III-V Oven|III-V Oven (D4)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | ||
*[[/Resist Pyrolysis Furnace|Resist Pyrolysis furnace]] - ''For pyrolysis of different resist | *[[/Resist Pyrolysis Furnace|Resist Pyrolysis furnace]] - ''For pyrolysis of different resist | ||
*[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers'' | *[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers'' | ||
Revision as of 12:59, 17 April 2023
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Choose a process type
- Oxidation - Grow a thermal oxide on silicon
- Annealing
- Doping with Boron
- Doping with Phosphorus
- Pyrolysis
Choose an equipment to use
A stack furnaces:
- Boron Drive-in + Predep furnace (A1) - For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards
- Gate Oxide furnace (A2) - For gate oxide growing on new wafers
- Phosphorus Drive-in furnace (A3) - For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep
- Phosphorus Predep furnace (A4) - For pre-deposition (doping) of phosphorus on Si wafers
C stack furnaces:
- Anneal-oxide furnace (C1) - For oxidation and annealing of 100 mm and 150 mm wafers
- III-V oxidation furnace (C2) - For oxidation of AlxGaAs layers.
- Anneal-bond furnace (C3) - For oxidation and annealing of bonded wafers
- Aluminium Anneal furnace (C4) - For annealing of wafers containing aluminium, Al2O3 and TiO2
E stack furnaces:
- Oxidation (8") furnace (E1) - For oxidation and annealing of 150 mm and 200 mm wafers
Other furnaces:
- Furnace: Multipurpose annealing - For annealing, oxidation and resist pyrolysis
- RTP Jipelec 2 - For rapid thermal annealing of III-V materials and Si based materials
- RTP Annealsys - For rapid thermal annealing and smoothing of Si based materials
- BCB Curing oven - For resist curing and metal alloyinglayers
Rules for storage and RCA cleaning of wafers to the A and C stack furnaces
Manual for the furnace computer to the A, B, C and E stack furnaces
The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here:
Manual for furnace computers for the A, B, C and E stack furnaces
Decommissioned equipment
- RTP Jipelec - For rapid thermal annealing of III-V materials and Si based materials
- APOX furnace - For growing of very thick oxide layers
- III-V Oven (D4) - For oxidation of AlxGaAs layers.
- Resist Pyrolysis furnace - For pyrolysis of different resist
- Noble furnace - For annealing and oxidation of non-clean wafers