Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions
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!AZ 4562 | !AZ 4562 | ||
| | | Not tested yet | ||
| 10 µm | | 10 µm | ||
| Fast | | Fast | ||
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| Priming: HMDS<BR>Rehydration after SB: 1 hour (may not be necessary)<br>Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>Degassing after exposure: 1 hour (may not be necessary)<br>Development: Multiple puddles, 5 x 60 s | | Priming: HMDS<BR>Rehydration after SB: 1 hour (may not be necessary)<br>Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>Degassing after exposure: 1 hour (may not be necessary)<br>Development: Multiple puddles, 5 x 60 s | ||
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