Specific Process Knowledge/Etch/III-V RIE: Difference between revisions

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-The diameter of the quartz plate is 20 cm, ie up to 2 4" wafers, 3 3" wafers or 4 2" wafers can be processed simultaneously. The area, A, of the quartz plate is 314 cm<sup>2</sup>.
+The diameter of the quartz plate is 20 cm with a recess for 4" wafers, ie up to one 4" wafer, one 3" wafer or one 2" wafer or several smaller samples can be processed simultaneously. To strike a plasma, the applied power should be 50 W or more; if a process needs a lower power during etch it is necessary to initially strike the plasma with eg 50 W (higher powers are needed for lower gas pressures) for 5-10 sec where after the power can be lowered to the desired value.
-The intensity of the plasma is the ratio of power applied to the plasma, P, to the area, A, of the quartz plate. A power of 1000 W thus gives a plasma intensity of 0.32 W/cm<sup>2</sup>. To strike a plasma, the applied power should be 50 W or more; if a process needs a lower power during etch it is necessary to initially strike the plasma with eg 50 W (higher powers are needed for lower gas pressures) for 5-10 sec where after the power can be lowered to the desired value.
 The chamber should be cleaned after '''all''' usage of the machine; read more under [[/III_V_RIE_ETCHES#Chamber Cleaning|Chamber Cleaning]].