Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE process trends: Difference between revisions
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=General tips for finding etching parameters (given by Oxford Instruments)= | =General tips for finding etching parameters (given by Oxford Instruments, used with permission)= | ||
One thing to remember is that the etch rate varies linearly with beam current while it varies exponentially with beam voltage. | One thing to remember is that the etch rate varies linearly with beam current while it varies exponentially with beam voltage. | ||
*Beam voltage – depends on application, 200-800eV. | *Beam voltage – depends on application, 200-800eV. | ||