Specific Process Knowledge/Lithography/EBeamLithography/JEOLPatternPreparation: Difference between revisions
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Some steps are done using Beamer from GenISys GmbH. We advise all users to familiarise themselves with Beamer [https://www.genisys-gmbh.com/webinar-series-beamer-training.html through the tutorial series found on GenISys own website.] or from our own [[Specific_Process_Knowledge/Lithography/EBeamLithography/BEAMER|Beamer guide.]] | Some steps are done using Beamer from GenISys GmbH. We advise all users to familiarise themselves with Beamer [https://www.genisys-gmbh.com/webinar-series-beamer-training.html through the tutorial series found on GenISys own website.] or from our own [[Specific_Process_Knowledge/Lithography/EBeamLithography/BEAMER|Beamer guide.]] | ||
=Exposure time estimation= | ==Exposure time estimation== | ||
The writing time should always be estimated prior to an exposure session. The writing time ''t'' [s] is a function of exposure dose ''Q'' [C/cm<sup>2</sup>], pattern area ''A'' [m<sup>2</sup>] and beam current ''I'' [A], as given below: | The writing time should always be estimated prior to an exposure session. The writing time ''t'' [s] is a function of exposure dose ''Q'' [C/cm<sup>2</sup>], pattern area ''A'' [m<sup>2</sup>] and beam current ''I'' [A], as given below: | ||